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Date |
07-01-2026 |
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Direction or Paragraph |
Case study based question
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1 |
p-n junction is a semiconductor diode. It is obtained by bringing p-type semiconductor in close contact with n- type semiconductor. A thin layer is developed at the p- n junction which is devoid of any charge carrier but has immobile ions. It is called depletion layer. At the junction a potential barrier appears, which does not allow the movement of majority charge carriers across the junction in the absence of any biasing of the junction. p-n junction offers low resistance when forward biased and high resistance when reverse biased. |
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Image |
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Instruction |
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1 |
What is PN Junction Diode? |
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Answer Format |
Document |
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Solution |
When P- type Semiconductor is dopped with N- Type Semiconductor then this is called PN Junction. |
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2. |
What is potential barrier? |
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Answer Format |
document |
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Solution |
Maximum potential in reversed biased is called potential barrier. |
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3 |
In the middle of depletion layer of reverse biased p- n junction, the |
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A |
The Electric field is zero |
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B |
Potential is zero |
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C |
Potential is maximum |
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D |
Electric field is maximum |
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E |
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Answer |
C |
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Solution |
When the junction is reversed biased the depletion layer increased due to this happening the potential is maximum. |