1

p-n junction is a semiconductor diode. It is obtained by bringing p-type semiconductor in close contact with n- type semiconductor. A thin layer is developed at the p- n junction which is devoid of any charge carrier but has immobile ions. It is called depletion layer. At the junction a potential barrier appears, which does not allow the movement of majority charge carriers across the junction in the absence of any biasing of the junction. p-n junction offers low resistance when forward biased and high resistance when reverse biased.

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Instruction

Read the paragraph and answer the following.

1

What do you mean by PN Junction biassing ?

Answer Format

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Solution

When PN junction is connected external source of energy cell o battery then it is called biassing . there are two type of biassing

Forword biassing

Reversed biassing

2.

Explain the importance of Band gap and band energy

Answer Format

Text

Solution

The gap between the conduction band and valance band are called band gap and the energy required is called band gap.

3

In the middle of depletion layer of reverse biased p- n junction, the

A

The Electric field is zero

B

Potential is zero

C

Potential is maximum

D

Electric field is maximum

E

Answer

C

Solution

When the junction is reversed biased the depletion layer increased due to this happening the potential is maximum.